| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 FIRST RESPONSE |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 SECOND RESPONSE |
| COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
| FEATURES PROVIDED | PROGRAMMED |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OPERATING TEMP RANGE | -55.0 TO 100.0 CELSIUS FIRST |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS SECOND |
| OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR SECOND RESPONSE |
| OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC FIRST RESPONSE |
| MEMORY DEVICE TYPE | EEPROM FIRST RESPONSE |
| MEMORY DEVICE TYPE | ROM SECOND RESPONSE |
| MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
| TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS FIRST RESPONSE |
| TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS NOMINAL ACCESS SECOND RESPONSE |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 CASE AND 20 CASE |