| BIT QUANTITY | 65536 |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ERASABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
| WORD QUANTITY | 8192 |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM ACCESS |