BIT QUANTITY | 65536 |
BODY HEIGHT | 0.045 INCHES NOMINAL |
BODY LENGTH | 0.560 INCHES MAXIMUM |
BODY WIDTH | 0.460 INCHES MAXIMUM |
FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
INCLOSURE MATERIAL | CERAMIC |
INPUT CIRCUIT PATTERN | 25 INPUT |
OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
MEMORY DEVICE TYPE | RAM |
OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
WORD QUANTITY | 8192 |
TERMINAL SURFACE TREATMENT | SOLDER |
TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |