| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND BURN IN AND ELECTROSTATIC SENSITIVE |
| INCLOSURE MATERIAL | METAL |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |