| FUNCTION FOR WHICH DESIGNED | GUNN DIODE |
| MATERIAL | SILICON SEMICONDUCTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 71.0 CELSIUS CASE |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD |
| NOMINAL THREAD SIZE | 0.099 INCHES |
| OVERALL DIAMETER | 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM |
| OVERALL LENGTH | 0.188 INCHES MINIMUM AND 0.208 INCHES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MINIMUM POWER OUTPUT |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS PLATED GOLD |
| TERMINAL TYPE AND QUANTITY | 2 CASE |
| TEST DATA DOCUMENT | 82577-925194 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| THREAD SERIES DESIGNATOR | UNC |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC |