| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND |
| 12.50 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER |
| POWER RATING PER CHARACTERISTIC | 750.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION AND |
| 360.0 WATTS MAXIMUM POWER OUTPUT |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND |
| 2 RIBBON |
| OVERALL LENGTH | 0.900 INCHES NOMINAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TRANSFER RATIO | 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 0.225 INCHES NOMINAL |
| OVERALL WIDTH | 0.405 INCHES NOMINAL |
| TEST DATA DOCUMENT | 80249-911319 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | FLANGE, CASE AND LEADS PLATED; CAP PLATING OPTION GOLD |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |