| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC FOURTH TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC THIRD TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC FIRST TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC SECOND TRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
| OVERALL LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| OVERALL WIDTH | 0.325 INCHES MAXIMUM |
| MATERIAL | PLASTIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION |
| MOUNTING METHOD | PRESS FIT |
| POWER RATING PER CHARACTERISTIC | 4.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN FOURTH TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN THIRD TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN FIRST TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN SECOND TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 14 RIBBON |