| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND |
| 225.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 133.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND |
| 1 CASE |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND |
| 0.340 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |